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S8594 S8594 is a quadrant photodiode array with a slit mask (code strip) formed on the si chip surface. features l quadrant photodiode with slit mask of l/s (line/space)=10/10 m l uses a light-shielded, non-reflective black slit l active area: o 5 mm/4 elements (element gap: 50 m) l bare chip type (window-less) applications l encoder photodiode si pin photodiode quadrant photodiode with slit mask for encoder

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5559 $ 5$ -(4 -: -."4&%; & ': & 67 S8594 uses a window-less package with no protection for the photodiode chip. always take the following precautions when handling. handling precautions handle the photodiode in a clean room. never touch the photodiode chip surface and wire bonding. wear dust-proof gloves and dust-proof mask. use an air dust cleaner to blow dust and foreign matter away from the photodiode chip surface. do not clean the photodiode by any method other than air blow. 1
si pin photodiode S8594 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2002 hamamatsu photonics k.k. cat. no. kmpd1054e01 jan. 2002 dn spectral response 0 0.2 0.4 0.6 0.1 0.3 0.5 0.7 0.8 (typ. ta=25 ?c) 200 400 600 800 1000 wavelength (nm) photo sensitivity (a/w) photo sensitivity temperature characteristic 0 190 400 600 800 1000 +1.0 +0.5 (typ. ) +1.5 -0.5 wavelength (nm) temperature coefficient (%/ ? c) dark current vs. reverse voltage reverse voltage (v) dark current 100 pa 10 na 1 na 10 pa 1 pa 0.01 0.1 1 10 100 (typ. ta=25 ? c) terminal capacitance vs. reverse voltage reverse voltage (v) terminal capacitance (typ. ta=25 ? c, f=1 mhz) 1 nf 10 pf 1 pf 100 ff 0.1 110 100 100 pf photo sensitivity uniformity 0 position on photosensitive surface (mm) [slit (light-shielded black mask): l/s=10 m, =830 nm, spot light size (1/e 2 ): 7 m] output 0.5 1 1.5 2 (, ) 8.8 0.2 (4 ) r0.3 10.6 0.2 1.5 1.27 1.5 2.5 0.46 1.26 0.15 0.03 0.03 5.0 a b d c (10 ) 0.6 package burr may extend to the outside a maximum of 0.3 mm. photosensitive surface details of active area active area anode b nc cathode common nc anode c anode d nc nc nc anode a 0.14 0.015 anode electrode slit l/s=0.01/0.01 0.05 0.05 0.01 0.01 slit l/s=0.01/0.01 0.01 0.01 kmpdb0185ea kmpdb0186ea dimensional outline (unit: mm) kmpdb0189ea kmpdb0123ea kmpdb0184ea kmpda0138ea 2

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